| 摘要 |
In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1x10-7 mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25 DEG C. and 400 DEG C., depositing an epitaxial metal layer on the semiconductor surface, adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25 DEG C. and 200 DEG C., starting a deposition of epitaxial CaF2 on the first metal layer, ramping the second temperature to a third substantially fixed temperature between 200 DEG C. and 500 DEG C. over a time period, maintaining the third temperature until the epitaxial CaF2 has deposited to a desired thickness, and stopping the deposition of epitaxial CaF2 on the first metal layer.
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