发明名称 DIELECTRIC LAYERED PRODUCT HAVING DEFORMED ILMENITE STRUCTURE AND MANUFACTURE THEREOF
摘要 PURPOSE: To provide a dielectric compound having new structure used for a nonvolatile memory and the like. CONSTITUTION: (Na1-x Kx )(Nb1-y Tay )O3 , (x and y are zero or more but 1 or less) having deformed ilmenite structure (LiNbO3 ferroelectric structure), and a multilayer dielectric compound formed with the above compound and Li(Nbx Ta1-x )O3 , (x is zero or more but 1 or less) are manufactured.
申请公布号 JPH08167325(A) 申请公布日期 1996.06.25
申请号 JP19940308884 申请日期 1994.12.13
申请人 ASAHI CHEM IND CO LTD 发明人 SHIBATA YOSHIHIKO;KUZE NAOHIRO
分类号 C04B35/00;C04B35/495;H01B3/00;H01B3/12;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/108;H01L29/788;H01L29/792 主分类号 C04B35/00
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