| 摘要 |
PURPOSE: To enable the stable progress in manufacture of the cell of a fine pattern, and also, improve the insulation property between electrodes, by performing a flattening process two times, and forming a spacer at a bit-line contact and a capacitor node contact. CONSTITUTION: An insulating film 63 for primary flattening is made all over the surface of a substrate 51, and the whole face is etched to flatten the surface of the substrate 51. The insulating film 63 at the section where a bit line 70 is made is removed, and a bit-line contact 64 is made, and the second spacers 65 are made on both sidewalls of the insulating film 63 for flattening within the bit-line contact 64. Next, an oxide film 71, a nitride film 73, and a high- temperature oxide film 75 are deposited as insulating films for secondary flattening all over the substrate 51, and the insulating films 71, 73, and 75 are etched or heat-treated all over the surface to flatten the surface of the substrate 51. Next, a nitride film 79 and an oxide film 81 are made all over the surface of the substrate 51, and then they are etched back to form the third spacers 85 at both sidewalls of the capacitor node contact 77. |
