SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To enable integration of a high performance logic circuit and a highly integrated memory inside the same chip by using a surface channel M0SFET for a logic circuit and by using a surface channel n-channel MOSFET and a buried channel type p-channel MOSFET for a memory cell. CONSTITUTION: A gate electrode 31 of an n-channel MOSFET constituting a logic circuit is formed of n-type polycrystalline silicon and a gate electrode 32 of a p-channel MOSFET is formed of p-type polycrystalline silicon. A gate electrode of an n-channel MOSFET of a memory cell and a gate electrode of a p-channel MOSFET of a memory cell are formed of n-type polycrystalline silicon 33. That is, since an MOSFET constituting a logic circuit and an MOSFET which has a short channel and can acquire high performance have the gate electrode 33 of the same conductivity, direct connection is possible. Thereby, a high performance logic circuit and a highly integrated full CMOS type memory cell array can be integrated inside the same chip.