发明名称 PROTECTION CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE: To protect an element from static electricity and also, give an electric signal having both positive and negative polarities, by earthing the wiring arranged from an i/o terminal to the element to be protected by the element or an element aggregate having a specified polarity. CONSTITUTION: Wiring arranged from an i/o terminal to an element to be protected is connected to a semiconductor substrate or a reference potential well region (earth) by the element or the element aggregate 1 which does not have polarity in current voltage property and has a negative resistivity temperature coefficient and is low in resistance at room temperature and shows insulating property or high resistance at the operation temperature of a semiconductor device. Accordingly, at room temperature, even if static electricity enters the i/o terminal or the like, the static electricity is discharged to the semiconductor substrate or a reference potential well region through a low resistor, and does not reach the element to be protected. Hereby, this can protect the element from the breakage by static electricity, and also this can handle an electric signal having both positive and negative polarities.
申请公布号 JPH08167694(A) 申请公布日期 1996.06.25
申请号 JP19940333057 申请日期 1994.12.14
申请人 NEC CORP 发明人 TOYAMA SHIGERU
分类号 H01L27/04;H01L21/822;H01L23/60;H01L27/02;H01L27/12;(IPC1-7):H01L27/04 主分类号 H01L27/04
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