| 摘要 |
PURPOSE: To obtain a practical blue green laser or light emitting diode which stably operates at the room temperature. CONSTITUTION: A confined layer 2, an n-type side barrier layer 3, a quantum well layer 4, a p-type side barrier layer 5, a confined layer 6, a ZnS0.06 Se0.94 layer 7, a ZnSe layer 8, a p-type electrode 9 and an n-type electrode 10 are formed on a substrate 1 made of n-type GaAs. A semiconductor grown layer except the layer 4 is lattice-matched to the substrate 1. A band lineup of ZnCdSSe for forming the layers 5 and 3 is a type 2, and a ZnMgSSe for forming the layers 2, 6 is a type 1. The layer 4 has a high position of valence band end according to the effect of a strain, and the position of the band is low. |
