| 摘要 |
PURPOSE: To attain the reduction of power consumption by boosting voltages to be applied to control electrodes of connection transistors in a shared sense- amplifier system only during a fixed period. CONSTITUTION: A switching signal generating circuit 253 is provided in this storage to apply control signalsϕ1 ,ϕ2 to sense-amplifiers 7 of a semiconductor storage 251. The circuit 253 applies boosted signalsϕ1 ,ϕ2 whose voltages are boosted only in the fixed period after an external an RAS signal rised up to sense-amplifiers 7. Thus, the reducing of power consumption is attained as compared with the case boosted control signalϕ1 ,ϕ2 are always applied to sense-amplifiers 7.
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