| 摘要 |
<p>PURPOSE: To contrive a low power-consumption in a high-density wiring and a high-speed operation by providing a structure which can improve the resistance to plasma, preventing the occurrence of corrosion caused by the use of low- dielectric material for an interlayer insulating film. CONSTITUTION: Wiring 14 is formed on a substrate 11 wherein at least its surface has insulation property, and the first first insulating film 15 is formed in the state that it covers each wiring 14, and the second insulating film 16 smaller in dielectric constant than that of the first insulating film 15 is formed at least between the wirings 14. The second insulating film 16 between the wirings 14 is made thicker by 10 to 100% in the height direction and the depth direction than the height of the wiring 14, or, films (not shown) consisting of low dielectrics are formed through the first insulating films or films equivalent to them above and below the wiring 14.</p> |
