| 摘要 |
PURPOSE: To provide a semiconductor pulse laser device which can oscillate a sharp pulse by a low modulation current. CONSTITUTION: In a semiconductor pulse laser device, a stripe active layer 12 interposed between a p-type clad layer 14 and an n-type clad layer 10 is provided. This n-type clad layer 10 comprises an n-InP substrate 10, and on the other hand, the p-type clad layer 14 comprises a p-InP layer 14. This active layer 12 has a multiple quantum well structure wherein barrier layers 26 and well layers 28 whose thicknesses are 60Årespectively are formed alternately. In this multiple quantum well structure, ten well layers 28 are provided, and they are denoted as first-tenth well layers in succession from the side of the p-type clad layer 14. Further, both between the active layer 12 and the p-type clad layer 14 and between the active layer 12 and the n-type clad layer 10, SCH layers 30 are interposed respectively, for the improvements of their light confining effects.
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