| 摘要 |
<p>PURPOSE: To provide an active matrix substrate having a high opening rate without increasing the occupying area of additive capacitor electrode parts by making it possible to prevent interlayer shorting in these additive capacitor electrode parts. CONSTITUTION: This active matrix substrate 10 is formed by wiring scanning lines 12 and signal lines 13 on an insulatable substrate 11 and forming picture element electrodes 14 in regions enclosed by the scanning lines 12 and the signal lines 13. TFTs 15 electrically connected to the respective scanning lines 12, signal lines 13 and picture element electrodes 14 are formed. The scanning lines 12 adjacent to the scanning lines 12 connected to the TFTs 15 for driving the picture elements are superposed on the picture element electrodes 14 and the additive capacitor electrode parts 26 are formed in the superposed parts. Anodically oxidized films, gate insulating films and protective films are laminated on the edge parts of the scanning lines 12. The gate insulating films are removed by patterning and the anodically oxidized films and protective films are laminated in the parts exclusive of the edge parts.</p> |
