| 摘要 |
<p>PURPOSE: To provide a means which can eliminate foreign matter or residue without damaging wiring elements, prevent the generation of imperfect wiring, and improve the quality level of a semiconductor integrated circuit device, in the forming process of wiring structure of a semiconductor integrated circuit device. CONSTITUTION: A semiconductor integrated circuit device 102 in the course of manufacturing is rotated by a chuck 101, after a wiring forming process is finished or after a plug structure forming process is finished. In this state, the device is cleaned with neutral solution containing oxidizing agent, e.g. hydrogen peroxide 106 or the like, which is supplied from a neutral solution supplying mechanism 103. The device is rinsed with pure water supplied from a pure water supply mechanism 107. The smaller the expoure area is, the stronger the etching action of the neutral solution containing the oxidizing agent is. Thereby foreign matter or residue is eliminated without damaging wiring elements, by the above washing, and the purpose is achieved.</p> |
