| 摘要 |
PURPOSE: To prevent increase in leakage current and degradation in dielectric strength at the side wall of a platinum electrode film and thereby prevent a diffusion preventive film from being oxidized, by connecting a lower electrode and a drain through slits formed in an insulating film, and burying a diffusion preventive conductive layer in those slits. CONSTITUTION: Switching transistors are formed on a semiconductor substrate 21 in a MOSFET forming process. An insulating film 41 is formed to cover the substrate 21 with the switching transistors formed thereon and to flatten the steps in the base. The insulating film 41 is subjected to photolithography and dry etching to form memory contact holes in order to connect lower electrodes 51 and drains. A diffusion preventive conductive layer 42 is deposited on the insulating film 41 and inside the memory contact holes. Further, a diffusion preventive film 43 and a platinum film 44, thick enough to prevent the oxidation of the diffusion preventive film 43, are formed in the contact holes. This prevents the oxidation of the diffusion preventive film 43. |
