| 摘要 |
PURPOSE: To provide a manufacturing method of a semiconductor memory which enables simple data write without employing high acceleration ion implantation and is suitable for delivery in a short period. CONSTITUTION: In a manufacturing method of an NAND mask ROM, a plurality of MOS transistors having a gate electrode 3 consisting of a lamination film of a polycrystalline silicon film 3a and a V silicide film 3b are formed in a silicon substrate 1, a resist pattern 6 having an opening 7 in an MOS transistor region to be set to D-type is formed and an n-type channel diffusion layer 8 is formed by oblique ion implantation and thermal treatment after the polycrystalline silicon film 3a of a gate electrode is side-etched. |
