METHOD FOR INSPECTING MASK PATTERN

摘要

PURPOSE: To obtain a method for inspecting mask patterns capable of certainly detecting an abnormal corrected part generated at the time of correcting optical proximity effect. CONSTITUTION: An inspecting data 14 for detecting an abnormal correction having the same pattern shape as the relevant design data is formed according to a design data 1 before correcting optical proximity effect. The detection of the abnormally corrected part is performed on the basis of collation result between a mask pattern of a produced mask or a resist pattern transferred on a wafer and the inspecting data for detecting the abnormal correction. Logical operation between graphics is performed between data before and after the correction of the optical proximity effect and the extracted different part therebetween is subjected to a sizing treatment to detect the abnormally corrected part.