发明名称 METHOD OF TREATING SUBSTRATE
摘要 PURPOSE: To scale down an exclusive space at the time when the size of a substrate is scaled up by re-holding the substrate to the second place of holding and treating the periphery of the second place of holding when the treatment of the periphery of the first place of holding is completed. CONSTITUTION: A section on the right side of a border L orthogonal to the longitudinal direction of a substrate 1 is represented by a first section A and a section on the left side by a second section B. The center of the first section A is represented by the first place PA of holding and the center of the second section B as the second place PB of holding. The first place PA of holding is held by a θ table 17, and electronic parts 4 are mounted regarding the mounting areas W1, W2 of the edge section of the periphery of the first place PA of holding, the substrate 1 is re-held to the second place PB of holding, and the electronic parts 4 are mounted in mounting areas W3, W4, W5 in the periphery of the second place PB of holding. Accordingly, a stroke, in which the substrate 1 is moved in the horizontal direction, reaches the half of length in the longitudinal direction of the substrate 1 when the substrate is held at the first place PA of holding, and the stroke also reaches the half of length in the longitudinal direction of the substrate 1 when the substrate is held at the second place PB of holding.
申请公布号 JPH08162796(A) 申请公布日期 1996.06.21
申请号 JP19940299541 申请日期 1994.12.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ONIZUKA YASUTO
分类号 H05K13/02;H01L21/68 主分类号 H05K13/02
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