| 摘要 |
PURPOSE: To provide a chemical amplification type positive resist material having high sensitivity against high-energy beams such as far ultraviolet rays, electron beams, and X-rays, particularly KrF excimer laser, capable of forming a pattern when developed by an alkaline aqueous solution, excellent in sensitivity, resolution, and plasma etching resistance, and having a resist pattern excellent in heat resistance. CONSTITUTION: The new sulfonium salt expressed by the formula is contained, where R<1> indicates the hydrogen atom, alkyl group, or alkoxy group, Y indicates trifluoromethane sulfonate or p-toluene sulfonate, (n) is an integer of 0-2, (m) is an integer of 1-3, and n+m=3. |
