发明名称 METHOD AND DEVICE FOR PLASMA PROCESSING
摘要 <p>A method for plasma processing, e.g., etching and film formation, using a microwave plasma. Microwaves of a specific mode are locally generated. The diffusion distance of the microwaves is so determined that the microwaves are diffused and propagated in a specific mode. The cross-sectional area of the propagating space of the microwaves is gradually changed over the distance. After propagated through the distance, the microwaves are introduced into a plasma discharging area. In the plasma discharging area, a plasma whose plasma density distribution at the central part of the plasma is higher than that at the peripheral part is generated, so that a sample in the processing chamber is processed uniformly.</p>
申请公布号 WO1996019096(P1) 申请公布日期 1996.06.20
申请号 JP1995000506 申请日期 1995.03.20
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