发明名称 |
NOISE CHARACTERISTICS ENHANCEMENT CIRCUIT OF SEMICONDUCTOR ELEMENT |
摘要 |
an inverting means comprising a first PMOS transistor and an NMOS transistor connected in series; a second PMOS transistor connected between an inverted pull-up transistor and the voltage source; a delaying means delaying the logic state outputted from the inverting means; and a latch means preventing the output state of being floating at the high potential state in case of the low state of input logic signal. The delay circuit output controls the gate of the second PMOS transistor.
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申请公布号 |
KR960008137(B1) |
申请公布日期 |
1996.06.20 |
申请号 |
KR19930027236 |
申请日期 |
1993.12.10 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
PARK, KI - WOO |
分类号 |
H03H11/26;H03K5/1252;H03K5/13;(IPC1-7):H03K19/00 |
主分类号 |
H03H11/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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