| 摘要 |
PURPOSE: To decrease melt sticking of a developer and to prevent decrease in the charge amt. on a developing layer by forming such a surface that has lots of polygonal ridge projections in the plane and has a fine rugged pattern in an area except for the area near the peaks. CONSTITUTION: The surface of this developing sleeve has lots of polygonal ridge like projections P', and the area S-S' except for the area near the ridge projections P' are finely roughened. In this method, The height h (μm) of the ridge projection defined by the difference between the lowest bottom P surrounded by the ridges and the highest peak P' of the ridges is preferably controlled to satisfy 0.01×r<=h<=2.5×r, wherein r (μm) is the average particle size of the developer. Further, the max. diagonal length d (μm) of the polygonal ridge projections is preferably controlled to satisfy 0.25×r<=d<=35×r, wherein (r) is the average particle size r (μm) of the developer, and the number (n) of projections per unit area (1mm<2> ) is controlled to satisfy 15<=n<=12000. |
