| 摘要 |
<p>A semiconductor device is constituted by a booster circuit, memory cell arrays (MCA1, MCA2), a sense amplifier circuit (S/A), transmission gate circuits (Q4, Q5; Q9, Q10), equalizing circuits (Q1, Q2, Q3; Q6, Q7, Q8) and a control circuit applying a boosted potential respectively to the gates of MOS transistors of the transmission gate circuits and the equalizing circuits when no memory cells of the memory cell arrays are selected whereby the capacitance of de-coupling capacitors connected to output terminals of the booster circuit can be reduced thereby contributing to reduction in chip area. <IMAGE></p> |
