Method of making in-containing III/V semiconductor devices

摘要

In-containing III/V semiconductor materials (e.g., InGaP) can be dry etched in BCl3 in ECR apparatus. We have discovered that addition of N2 to the BCl3 can result in substantially higher etch rate (e.g., more than 50% higher). Etching is substantially without incubation period, and the resulting surface can be very smooth (e.g., RMS roughness less than 5 nm, even less than 2.5 nm). Exemplarily, the novel etching step is used in the manufacture of a InGaP/GaAs transistor.