| 摘要 |
An integrated circuit pattern of a sense amplifier is disclosed. The sense amplifier includes a sense circuit connected to a memory array and a column gate. The sense circuit includes N-MOSFETs cross-coupled between paired bit lines. The column gate includes an N-MOSFET for connecting the bit line to a data line and an N-MOSFET for connecting the other bit line to another data line. The N-MOSFET contained in the sense circuit and the N-MOSFET contained in the column gate are integrated in one element region. Further, the N-MOSFET contained in the sense circuit and the N-MOSFET contained in the column gate are integrated in another element region.
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