| 摘要 |
A sputtering apparatus deposits a material layer on a substrate. The apparatus includes a tube extending partially between the target and substrate, to selectively prevent portions of the target material flux from reaching the substrate to provide a more symmetrical deposition flux at each region of the substrate. In one aspect, the tube includes a single tubular wall which provides an inner and an outer particle blocking surface. The upper end of the inner surface of the tube is positioned to block, from the substrate edge, that portion of the sputtering target surface inward of the substrate edge which exceeds the target surface located outward of the substrate edge, and the lower surface of the outer wall is located to block access of particles sputtered from the edge of the target to the center of the substrate.
|
