P-I-N photodiode with transparent conductor n+layer

摘要

The elimination of the spatial variation in the frequency response of large area p-i-n photodiodes is disclosed using indium tin oxide (ITO) n+ material as a transparent contact overlayer. The I-V, C-V, and frequency response characteristics are shown for p-i-n photodiodes fabricated with and without the ITOn+ contact overlayer to demonstrate the superior performance of the indium-tin-oxide p-i-n photodiode. Also, a p-i-n photodiode can be structured using an ITOn+ window layer to extend the operating range to shorter optical wavelengths, for example, from 1.0 mu m down to 0.4 mu m.