发明名称 Method of manufacturing a semiconductor device by forming pyramid shaped bumps using a stabilizer
摘要 By using an electroless metallization bath to which a stabilizer is added which suppresses the cathodic partial reaction, pyramid-shaped bumps (53) can be grown on the bond pads of semiconductor devices without lateral overgrowth of the coating layer 3. The angle of inclination a is a function of the concentration of the stabilizer.
申请公布号 US5527734(A) 申请公布日期 1996.06.18
申请号 US19910764662 申请日期 1991.09.24
申请人 U.S. PHILIPS CORPORATION 发明人 VAN DER PUTTEN, ANDREAS M. T. P.
分类号 C23C18/31;H01L21/288;H01L21/60;(IPC1-7):H01L21/441 主分类号 C23C18/31
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