发明名称 |
Method of manufacturing a semiconductor device by forming pyramid shaped bumps using a stabilizer |
摘要 |
By using an electroless metallization bath to which a stabilizer is added which suppresses the cathodic partial reaction, pyramid-shaped bumps (53) can be grown on the bond pads of semiconductor devices without lateral overgrowth of the coating layer 3. The angle of inclination a is a function of the concentration of the stabilizer.
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申请公布号 |
US5527734(A) |
申请公布日期 |
1996.06.18 |
申请号 |
US19910764662 |
申请日期 |
1991.09.24 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
VAN DER PUTTEN, ANDREAS M. T. P. |
分类号 |
C23C18/31;H01L21/288;H01L21/60;(IPC1-7):H01L21/441 |
主分类号 |
C23C18/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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