| 摘要 |
PCT No. PCT/JP93/00621 Sec. 371 Date Nov. 10, 1994 Sec. 102(e) Date Nov. 10, 1994 PCT Filed May 12, 1993 PCT Pub. No. WO93/23878 PCT Pub. Date Nov. 25, 1993.It is an object of the present invention to provide a semiconductor device having a high current driving capability and capable of high-speed circuit operation. This device has a first semiconductor region of one conductivity type on a substrate; source and drain regions of the opposite conductivity type in the first region; a first insulating film on the substrate between the source and drain regions; and a conductive gate electrode on the first insulating film. The first insulating film comprises an insulator having a dielectric constant of 8 or more and its film thickness tI satisfies the following express (1). The source and drain regions are formed in a self-alignment manner with respect to the gate electrode: tr<3x( epsilon r/ epsilon SiO2) (nm) (1) where epsilon r is the dielectric constant of the first insulating film, and epsilon Sio2 is the dielectric constant of the silicon oxide film.
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