发明名称 Apparatus for plasma enhanced processing of substrates
摘要 PCT No. PCT/DE92/00471 Sec. 371 Date May 13, 1994 Sec. 102(e) Date May 13, 1994 PCT Filed Jun. 9, 1992 PCT Pub. No. WO92/22920 PCT Pub. Date Dec. 23, 1992.Disclosed is an apparatus for plasma-enhanced processing of substrates, having a recipient in which ions and reactive neutral particles (radicals) formed in plasma act on the substrate. The present invention is distinguished by having means for varying the plasma volume are provided in order to control the absolute values of the ionic current densities and the radical current densities and in order to control the relative ratio of the ionic current densities and the radical current densities on the surface of the substrate.
申请公布号 US5527394(A) 申请公布日期 1996.06.18
申请号 US19940157194 申请日期 1994.05.13
申请人 FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 HEINRICH, FRIEDHELM;HOFFMANN, PETER
分类号 C23C14/34;C23C14/35;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 主分类号 C23C14/34
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