Thin-film transistor

摘要

A thin-film transistor of an inverted-staggered structure includes a semiconductor layer with a channel portion, a protective insulating film extending on the channel portion of the semiconductor layer, a source electrode, and a drain electrode. The protective insulating film has a rectangular shape with four corners, and each of two of the corners overlaps one of the source electrode and the drain electrode while two others of the corners overlap neither the source electrode nor the drain electrode. The thin-film transistor may be modified so that one of the corners overlaps one of the source electrode and the drain electrode while three others of the corners overlap neither the source electrode nor the drain electrode.