| 摘要 |
An amplification-type photoelectric conversion device utilizes a JFET and is capable of amplifying charges generated by photoelectric conversion with a high amplification factor and improves the S/N ratio. The device is provided with a drive circuit for respectively applying driving signals to a source region, a drain region and a gate electrode of the JFET. The drive circuit has a first signal mode for accumulating charges generated by incident light on the JFET, and a second signal mode for causing the flow of current between the source and the drain and raising a potential difference between the source and the drain to a high level thereby causing an impact-ionization effect corresponding to an amount of the charges accumulated by the first mode to accumulate the resulting charges. A signal output corresponding to a total amount of the charges accumulated by the first and second modes is delivered from the drain.
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