| 摘要 |
A semiconductor laser includes a first conductivity type semiconductor substrate having opposite first and second surfaces, a first conductivity type semiconductor layer grown on the first surface, a thin GaInP or AlGaInP active layer having a band gap energy smaller than that of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer having a band gap energy larger than that of the active layer. The first conductivity type semiconductor layer has a first crystal plane that provides a quantum wire structure of the active layer and second crystal planes disposed at opposite sides of the first crystal plane. The first crystal plane forms a first angle smaller than a prescribed angle with a {100} surface, and the second crystal plane forms a second angle larger than the first angle with the {100} surface. The active layer is grown under growth conditions that produce atoms ordered opposite {100} surface and provide the active layer in a disordering state wherein atoms opposite a surface forming an angle with the {100} surface. Therefore, a semiconductor laser including a quantum wire with improved quantum effect is realized.
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