REACTOR FOR THE VAPOR PHASE DEPOSITION (CVD) OF THIN LAYERS

摘要

The invention relates to a CVD reactor for the deposition of thin layers of substrates by vapor phase growth. The CVD reactor comprises a housing (10), an inlet circuit (11) for supplying a gas (8) to the housing (10), a discharge conduit (12) through which the gas (8) escape from the housing (10) and a susceptor (35) used to carry a substrate (36) and fitted with a heating system (37). The CVD reactor is comprised of an injection chamber (40) connected to the inlet circuit (11) and a growth chamber (41) containing the susceptor (35), both chambers being separated by a partition wall (42) traversed by openings (43). The gas (8) can reach the susceptor (35) through the opening (43). Application to the fabrication of semiconductors.