| 摘要 |
<p>The invention relates to a method and equipment for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (1) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. The reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (1), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. The gaseous reaction products and possible excess reactants are removed in gas phase from the reaction space. According to the invention, the gas flow in the reaction space is restricted on the gas flow path after the substrates, whereby the conductance of the gas flow in the reaction space is arranged to be greater cross-directionally to the gas flow at the substrates than after the substrates. The equipment suited to implement the invention comprises vertically or horizontally stacked planar elements (10) of which at least a number are mutually identical and into which are machined reaction chambers (13) and recesses/openings (7, 4) forming gas inflow and outflow channels.</p> |
