CHEMICAL SYNTHESIS FILM SPREAD METHOD FOR THE TANTALIUM CONDENSOR

摘要

The chemical synthetic film(Ta2O5) for tantalum condenser is formed by densely coating the surface of condenser device with tantalum oxide based dielectric film in constantly maintaining constant voltage and current for 30min-1hr, before approaching the constant voltage and current. The chemical synthetic film(Ta2O5) can stand enough overvoltage and overelectric current because of the formation of dense and viscous film layer(Ta2O5).