Method of forming a silicon etch stop layer for an integrated optical component

摘要

The method involves defining a process which removes a layer of silica but not a layer of silicon. A silicon stop layer is deposited over a base structure. A stop layer for a protective silica layer is formed at a temperature less than that for silica deposition, using flame hydrolysis. An upper silica layer (12) is then deposited by flame hydrolysis in order to provide upper confinement for optical waveguides. This layer covers the alignment stops, and is etched in particular regions to expose the stop. The component can then be positioned by application against this stop.