Method for the preparation of a single crystal of silicon with decreased crystal defects

摘要

An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangement of the cooling zone of the single crystal growing puller to have such a temperature distribution that the time taken by the growing single crystal to pass through the temperature range from the melting point of silicon to 1200 DEG C is from 50 minutes to 200 minutes and the time taken by the growing single crystal to pass through the temperature range from 1200 DEG C to 1000 DEG C does not exceed 130 minutes.