Surface acoustic wave device

摘要

A layer of boron nitride being relatively easily workable is brought into close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. A surface acoustic device (10) comprises a substrate (1), a boron nitride film (2) which is formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) which are formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).