| 摘要 |
The ISFET is encapsulated in such a manner that the ISFET is dipped in an insulating material in liquid state to coat its metal contact points(2,3,4,5) with the insulating material, without the sensitive ion gate(1) being coated with it, and the ISFET with a measurement circuit connected thereto is dipped into a solution whose ion concentration to be measured, thereby electrically isolating the ISFET and the solution to be measured.
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