发明名称 Substrate for semiconductor apparatus
摘要 This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
申请公布号 US5525428(A) 申请公布日期 1996.06.11
申请号 US19950368657 申请日期 1995.01.04
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 OSADA, MITUO;AMANO, YOSHINARI;OGASA, NOBUO;OHTSUKA, AKIRA
分类号 B22F3/24;H01L21/52;H01L21/58;H01L23/14;H01L23/373;(IPC1-7):B22F7/04 主分类号 B22F3/24
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