发明名称 |
Substrate for semiconductor apparatus |
摘要 |
This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate. |
申请公布号 |
US5525428(A) |
申请公布日期 |
1996.06.11 |
申请号 |
US19950368657 |
申请日期 |
1995.01.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
OSADA, MITUO;AMANO, YOSHINARI;OGASA, NOBUO;OHTSUKA, AKIRA |
分类号 |
B22F3/24;H01L21/52;H01L21/58;H01L23/14;H01L23/373;(IPC1-7):B22F7/04 |
主分类号 |
B22F3/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|