LIGHT EMITTING THYRISTOR AND SELF-SCANNING LIGHT EMITTING DEVICE

摘要

PURPOSE: To obtain a light emitting thyristor from which the light can be taken out efficiently while ensuring sufficient breakdown voltage between the cathode and the gate and decreasing the contact resistance between the gate and the semiconductor layer, and a light emission element array or a light emission device employing the light emission thyristor. CONSTITUTION: An N-type layer 24, a P-type layer 23, an N-type layer 22 and a P-type layer 21 are laminated sequentially on an N-type semiconductor substrate 1. The N-type layer 22 is heavily doped on the side opposite to the semiconductor substrate 1 and lightly doped on the semiconductor substrate 1 side. The P-type layer 23 is lightly doped on the side opposite to the semiconductor substrate 1 and heavily doped on the semiconductor substrate 1 side.