| 摘要 |
PURPOSE: To provide a device for injecting electrically neutral high-speed atoms without any charge instead of ions with charge in a method for injecting dopant into a semiconductor wafer. CONSTITUTION: In an ion injector equipped with an ion source 5, a means 6 for accelerating ions generated from the ion source 5, a sample stand 3 where a sample 4 to which the accelerated ions are to be injected is placed, an ion neutralizer 21 is provided between the ion source 5 and the sample stand 3. The ion neutralizer 21 has a structure equipped with a container for storing a gas whose pressure is between 1×10-<4> Torr and 1×10-<1> . The container is equipped with a hole 25 for the incident accelerated ions and a hole 26 for generating high-speed atoms. The ion neutralizer 21 has a function for neutralizing the electric charge of the ions any yielding electrically neutral high-speed atoms and injects them into the sample instead of ions.
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