| 摘要 |
A silicon oxide film is formed by a CVD process, with the use of a silane group gas and water as a main feed gas. Further, a film including silanol is formed by the plasma CVD process with a specific plasma energy, using the silane group gas and water as the main feed gas. The specific plasma energy is selected at 40 (Wx DEG C./cm2) or below. By annealing this film including silanol, or by performing the oxygen plasma process or the ammonia plasma process, the oxide film or the nitride film is formed.
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