| 摘要 |
<p>PURPOSE: To realize a semiconductor memory circuit capable of preventing the malfunction of a sense amplifier and preventing unwanted current consumption. CONSTITUTION: This circuit is provided with a sense enable signal generation circuit 8 generating a sense enable signal SE when any one of (m) pieces of word lines WL0-WLm-1 is driven and becomes a high level state and outputting it to the drive terminal of the sense amplifier 5. Thus, the semiconductor memory circuit capable of preventing the malfunction of the sense amplifier and having a wide operation margin for fluctuation such as a source voltage, a process is realized. Further, the circuit is provided with a control circuit 9 supplying an inputted read-out signal RD to a column decoder 3 and a row decoder 2, stopping the supply of the read-out signal RD when the data are read out, and the output of the sense amplifier 5 is decided and stopping the drive of the word line by the row decoder 2. Thus, the un-wanted current consumption is prevented.</p> |
