发明名称 |
PRODUCTION OF SUBSTRATE FOR VAPOR SYNTHESIS OF SINGLE CRYSTAL DIAMOND FILM |
摘要 |
PURPOSE: To provide a method for producing a substrate for synthesizing a single crystal diamond film by which the diamond film of a single crystal can be vapor synthesized in a wide area at a low cost and the single crystal diamond substrate of a large area can be obtained to enable a remarkable improvement in characteristics of diamond and practical use thereof in a wide application field using the diamond. CONSTITUTION: A series of steps of a rolling step and an annealing step for a simple substance or an alloy material of platinum are repeated once or plural times to regulate the thickness to <=0.5mm, preferably <=0.2mm. Thereby, the (111) crystal face or a crystal face tilted at an angle within the range of ±10 deg. from the (111) crystal face is formed in all or a part of the surface of the simple substance or alloy material of the platinum. The simple substance or alloy of the platinum is heated at >=800 deg.C temperature in the annealing step. |
申请公布号 |
JPH08151295(A) |
申请公布日期 |
1996.06.11 |
申请号 |
JP19940315974 |
申请日期 |
1994.11.25 |
申请人 |
KOBE STEEL LTD |
发明人 |
SHINTANI YOSHIHIRO;TACHIBANA TAKESHI;NISHIMURA KOZO;MIYATA KOICHI;YOKOTA YOSHIHIRO;KOBASHI KOJI |
分类号 |
C30B29/04;C23C16/02;C23C16/27;C30B25/02;H01L31/10;H03H3/08 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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