发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
The present invention is mainly characterized in that a Bi-CMOS is obtained in which characteristics of a bipolar transistor are not deteriorated. The device includes a bipolar transistor and a CMOSFET formed on a semiconductor substrate separately from each other by a field oxide film. The thickness of a gate electrode of an NMOSFET and a gate electrode of a PMOSFET is made larger than the thickness of an emitter electrode of the bipolar transistor.
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申请公布号 |
US5525530(A) |
申请公布日期 |
1996.06.11 |
申请号 |
US19940363038 |
申请日期 |
1994.12.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
WATABE, KIYOTO |
分类号 |
H01L27/06;H01L21/331;H01L21/8249;H01L29/73;H01L29/732;(IPC1-7):H01L21/265 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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