| 摘要 |
A semiconductor memory device of the invention includes memory cells each having of a transistor and a capacitor, bit lines electrically connected to the memory cells, data lines, transfer circuits each electrically connecting the bit lines and the data lines in response to column selection signals, and conductive lines each electrically connected between a transistor and a capacitor of selected ones of the memory cells and having a predetermined potential. Owing to this arrangement, the semiconductor memory device can be realized wherein volatile memory cells and non-volatile memory cells are provided within a single memory cell array. Further, the semiconductor memory device of the invention is of a semiconductor memory device having high flexibility, wherein the ratio between the volatile memory cells and the non-volatile memory cells can be easily decided according to a user's demand.
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