| 摘要 |
When forming reflection electrodes on a thin film transistor which is a switching element, it is formed on irregular plural bumps, an organic insulating film possessing bumps corresponding to the bumps is formed, and the reflection electrodes are formed thereon. Since the reflection electrodes are formed on the organic insulating film, there is no effect of the thin film transistor, and the reflection electrodes may be formed as largely as possible in a range capable of maintaining the insulation between adjacent reflection electrodes, so that the opening rate may be enhanced to 90% or more.
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