| 摘要 |
PURPOSE: To obtain a GaP green light emitting diode having higher luminance and reliability by enhancing the crystal quality in the vicinity of the pn junction, the surface of a growth layer, etc. CONSTITUTION: The method for producing a GaP green light emitting diode sequentially comprises a step 20 for dissolving the epitaxial material in a Ga solution coming into contact with an n-type GaP substrate, a first cooling step 21 for cooling the Ga solution to supersaturate, a step 22 for sustaining a constant temperature by supplying N (nitrogen) to the Ga solution, a second cooling step 23 for cooling the Ga solution, and a third cooling step 25 for cooling the Ga solution furthermore while supplying a p-type dopant thereto without carrying out the constant temperature sustaining step. The p-type dopant is fed by adding metal particles containing the p-type dopant directly to the Ga solution. |
