PRODUCTION OF PHASE-SHIFT MASK AND SPUTTERING DEVICE

摘要

PURPOSE: To easily form a charge-up preventive film at the time of forming a phase-shifter pattern without increasing the number of processes and to easily release the preventive film with good selectivity without increasing the number of process. CONSTITUTION: An attenuation-shifter film 2 consisting of a chromium-based material contg. at least oxygen or nitrogen and a chromium film 3 are successively formed on a transparent substrate 1. An electron-beam resist 4 is then applied on the chromium film 3, and the resist 4 is patterened. The resist 4 is then developed to form a resist pattern. The chromium film 3 and the attenuation-shifter film 2 are etched in one step with the resist patterns as a mask to form an attenuation-shifter pattern, and then the resist pattern and chromium film 3 are removed.