SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To have a multivalue memory having a small memory array area together with allowing formation of an offset region with good accuracy. CONSTITUTION: Offset source/drain regions (N-type diffusion layers) 6 are formed so that their side end parts may be located about on the extension line of the outside surfaces of the sidewall insulation layers 5 located on both sides of the first gate electrodes 3. These n-type diffusion layers 6 are self-matchedly formed by ion implantation having a sidewall insulation layers 5. Thereby, offset regions 17 are also self-matchedly formed.