| 摘要 |
The present invention relates to a method for forming a silicon oxide film on a substrate by the thermal chemical vapor deposition method (thermal CVD method) using a gas mixture of ozone (O3) and tetraethoxyorthosilicate (TEOS). It is an object of the present invention to provide a method for forming an insulating film in a semiconductor device, in which anomalous deposition of the film at a step portion (a portion of difference in level) is prevented and the film contains less moisture and less organic matter and is superior in smoothness. The present invention includes the steps of exposing the depositing surface of the substrate 14 to tetraethoxyorthosilicate in the absence of oxygen and ozone at the elevated temperature and forming an oxide film 15 on the substrate 14 by the thermal CVD method using a gas mixture of ozone (O3) and tetraethoxyorthosilicate at a deposition temperature. In a second embodiment HMDS is substituted for TEOS in the pretreatment step.
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